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1 MRF1511T1 motorola rf device data the rf mosfet line
nchannel enhancementmode lateral mosfet the MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 mhz. the high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 7.5 volt portable fm equipment. ? specified performance @ 175 mhz, 7.5 volts output power e 8 watts power gain e 11.5 db efficiency e 55% ? capable of handling 20:1 vswr, @ 9.5 vdc, 175 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent largesignal impedance parameters ? broadband uhf/vhf demonstration amplifier information available upon request ? rf power plastic surface mount package ? available in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drainsource voltage v dss 40 vdc gatesource voltage v gs 20 vdc drain current e continuous i d 4 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 62.5 0.5 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2 c/w (1) calculated based on the formula p d = note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf1511/d semiconductor technical data 175 mhz, 8 w, 7.5 v lateral nchannel broadband rf power mosfet case 46602, style 1 (pld1.5) plastic ? motorola, inc. 2000 g d s t j t c r q jc rev 1
MRF1511T1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 35 vdc, v gs = 0) i dss e e 1 m adc gatesource leakage current (v gs = 10 vdc, v ds = 0) i gss e e 1 m adc on characteristics gate threshold voltage (v ds = 7.5 vdc, i d = 170 m a) v gs(th) 1.0 1.6 2.1 vdc drainsource onvoltage (v gs = 10 vdc, i d = 1 adc) v ds(on) e 0.4 e vdc dynamic characteristics input capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c iss e 100 e pf output capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c oss e 53 e pf reverse transfer capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c rss e 8 e pf functional tests (in motorola test fixture) commonsource amplifier power gain (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) g ps 10 11.5 e db drain efficiency (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) h 50 55 e %
3 MRF1511T1 motorola rf device data figure 1. 135 175 mhz broadband test circuit v dd c6 r4 c7 c5 r3 rf input rf output z2 z3 z6 c1 c3 c14 dut z7 z9 z10 z4 z5 l4 z8 n2 c18 b2 n1 + c11 b1, b2 short ferrite bead, fair rite products (2743021446) c1, c5, c18 120 pf, 100 mil chip capacitor c2, c10, c12 0 to 20 pf, trimmer capacitor c3 33 pf, 100 mil chip capacitor c4 68 pf, 100 mil chip capacitor c6, c15 10 m f, 50 v electrolytic capacitor c7, c16 1,200 pf, 100 mil chip capacitor c8, c17 0.1 m f, 100 mil chip capacitor c9 150 pf, 100 mil chip capacitor c11 43 pf, 100 mil chip capacitor c13 24 pf, 100 mil chip capacitor c14 300 pf, 100 mil chip capacitor l1, l3 12.5 nh, a04t, coilcraft l2 26 nh, 4 turn, coilcraft l4 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mount r1 15 w , 0805 chip resistor r2 1.0 k w , 1/8 w resistor r3 1.0 k w , 0805 chip resistor r4 33 k w , 1/8 w resistor z1 0.200 x 0.080 microstrip z2 0.755 x 0.080 microstrip z3 0.300 x 0.080 microstrip z4 0.065 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.095 x 0.080 microstrip z8 0.418 x 0.080 microstrip z9 1.057 x 0.080 microstrip z10 0.120 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper z1 c2 r1 c4 v gg c15 + c8 b1 r2 c16 c17 c9 c10 c13 c12 l3 l2 l1 typical characteristics, 135 175 mhz 175 mhz 155 mhz 135 mhz p out , output power (watts) irl, input return loss (db) 5 15 20 10 2 145 figure 2. output power versus input power p in , input power (watts) 2 figure 3. input return loss versus output power 0.3 p out , output power (watts) 0 8 0.5 0.1 4 0.4 0.7 0.2 0 10 3 0.6 6 v dd = 7.5 v 7 6910 8 175 mhz 155 mhz 135 mhz v dd = 7.5 v 25
MRF1511T1 4 motorola rf device data typical characteristics, 135 175 mhz 2 p out , output power (watts) 50 0 70 010 eff, drain efficiency (%) 30 60 40 3 1 eff, drain efficiency (%) figure 4. gain versus output power p out , output power (watts) 8 6 14 figure 5. drain efficiency versus output power 2 gain (db) 5 figure 6. output power versus biasing current 12 i dq , biasing current (ma) 4 figure 7. drain efficiency versus biasing current 80 i dq , biasing current (ma) figure 8. output power versus supply voltage 4 v dd , supply voltage (volts) 2 figure 9. drain efficiency versus supply voltage v dd , supply voltage (volts) 30 14 8 4 0 40 60 70 40 400 0 8 14 600 1000 80 5 6 10 10 16 200 50 4 12 p out , output power (watts) 200 1000 400 600 p out , output power (watts) 61416 12 612 816 3 1 60 4 6 10 12 eff, drain efficiency (%) 50 70 47 58 69 20 10 175 mhz 155 mhz 135 mhz v dd = 7.5 v 175 mhz 155 mhz 135 mhz v dd = 7.5 v 710 9 8 6 800 7 8 9 11 175 mhz 155 mhz 135 mhz v dd = 7.5 v p in = 27 dbm 800 175 mhz 155 mhz 135 mhz v dd = 7.5 v p in = 27 dbm 10 175 mhz 155 mhz 135 mhz i dq = 150 ma p in = 27 dbm 10 175 mhz 155 mhz 135 mhz i dq = 150 ma p in = 27 dbm
5 MRF1511T1 motorola rf device data figure 10. 66 88 mhz broadband test circuit v dd c6 r4 c7 c5 r3 rf input rf output z2 z3 z6 c1 c3 c12 dut z7 z9 z10 z4 z5 l4 z8 n2 c16 b2 n1 + c9 z1 c2 r1 c4 v gg c13 + c8 b1 r2 c14 c15 c11 c10 l3 l1 b1, b2 short ferrite bead, fair rite products (2743021446) c1, c12 330 pf, 100 mil chip capacitor c2 43 pf, 100 mil chip capacitor c3, c10 0 to 20 pf, trimmer capacitor c4 24 pf, 100 mil chip capacitor c5, c16 120 pf, 100 mil chip capacitor c6, c13 10 m f, 50 v electrolytic capacitor c7, c14 1,200 pf, 100 mil chip capacitor c8, c15 0.1 m f, 100 mil chip capacitor c9 380 pf, 100 mil chip capacitor c11 75 pf, 100 mil chip capacitor l1 82 nh, coilcraft l2 55.5 nh, 5 turn, coilcraft l3 39 nh, 6 turn, coilcraft n1, n2 type n flange mount r1 15 w , 0805 chip resistor r2 51 w , 1/2 w resistor r3 100 w , 0805 chip resistor r4 33 k w , 1/8 w resistor z1 0.136 x 0.080 microstrip z2 0.242 x 0.080 microstrip z3 1.032 x 0.080 microstrip z4 0.145 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.134 x 0.080 microstrip z8 0.490 x 0.080 microstrip z9 0.872 x 0.080 microstrip z10 0.206 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper typical characteristics, 66 88 mhz p out , output power (watts) irl, input return loss (db) 18 20 10 2 1 0 45 figure 11. output power versus input power p in , input power (watts) 2 figure 12. input return loss versus output power 0.3 p out , output power (watts) 0 6 0.5 0.1 4 0.4 0.7 0.2 0 10 3 0.6 8 66 mhz 77 mhz 88 mhz v dd = 7.5 v 7 6910 8 14 16 12 2 6 8 4 66 mhz 77 mhz 88 mhz v dd = 7.5 v
MRF1511T1 6 motorola rf device data typical characteristics, 66 88 mhz 5 p out , output power (watts) 50 0 70 14 eff, drain efficiency (%) 30 60 40 3 2 eff, drain efficiency (%) figure 13. gain versus output power p out , output power (watts) 8 10 16 figure 14. drain efficiency versus output power 2 gain (db) 1 figure 15. output power versus biasing current 12 i dq , biasing current (ma) 4 figure 16. drain efficiency versus biasing current 80 i dq , biasing current (ma) figure 17. output power versus supply voltage 5 v dd , supply voltage (volts) 2 figure 18. drain efficiency versus supply voltage v dd , supply voltage (volts) 9 8 5 0 40 60 60 40 400 0 8 14 600 1000 80 6 8 10 12 18 200 50 4 14 p out , output power (watts) 200 1000 400 600 p out , output power (watts) 6910 7 678 10 35 4 6 10 12 eff, drain efficiency (%) 50 70 30 i dq = 150 ma p in = 25.7 dbm 7 69 810 66 mhz 77 mhz 88 mhz 20 10 10 69 8 7 66 mhz 77 mhz 88 mhz 800 5 11 7 9 66 mhz 77 mhz 88 mhz v dd = 7.5 v p in = 25.7 dbm v dd = 7.5 v v dd = 7.5 v 800 70 66 mhz 77 mhz 88 mhz v dd = 7.5 v p in = 25.7 dbm 66 mhz 77 mhz 88 mhz 66 mhz 77 mhz 88 mhz i dq = 150 ma p in = 25.7 dbm
7 MRF1511T1 motorola rf device data note: z ol * was chosen based on tradeoffs between gain, drain efficiency, and device stability. figure 19. series equivalent input and output impedance z o = 10 w z in = complex conjugate of source impedance with parallel 15 w resistor and 24 pf capacitor in series with gate. (see figure 10). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and h d > 50 %. f mhz z in w z ol * w 135 20.1 j0.5 2.53 j2.61 z in = complex conjugate of source impedance with parallel 15 w resistor and 68 pf capacitor in series with gate. (see figure 1). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and h d > 50 %. v dd = 7.5 v, i dq = 150 ma, p out = 8 w 155 17.0 +j3.6 3.01 j2.48 175 15.2 +j7.9 2.52 j3.02 f mhz z in w z ol * w 66 25.3 j0.31 3.62 j0.751 v dd = 7.5 v, i dq = 150 ma, p out = 8 w 77 25.6 +j3.62 3.59 j0.129 88 26.7 +j6.79 3.37 j0.173 z ol * z in 135 155 f = 175 mhz 135 155 f = 175 mhz 66 77 z in f = 88 mhz 66 77 f = 88 mhz z ol * z in z ol * input matching network device under test output matching network
MRF1511T1 8 motorola rf device data table 1. common source scattering parameters (v dd = 7.5 vdc) i dq = 150 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 30 0.88 165 18.92 95 0.015 8 0.84 169 50 0.88 171 11.47 91 0.016 5 0.84 173 100 0.87 175 5.66 85 0.016 7 0.84 176 150 0.87 176 3.75 82 0.015 5 0.85 176 200 0.87 177 2.78 78 0.014 6 0.84 176 250 0.87 177 2.16 75 0.014 10 0.85 176 300 0.88 177 1.77 72 0.012 17 0.86 176 350 0.88 177 1.49 69 0.013 11 0.86 176 400 0.88 177 1.26 66 0.013 17 0.87 175 450 0.88 177 1.08 64 0.011 20 0.87 175 500 0.89 176 0.96 63 0.012 20 0.88 175 i dq = 800 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 30 0.89 166 18.89 95 0.014 10 0.85 170 50 0.88 172 11.44 91 0.015 8 0.84 174 100 0.87 175 5.65 86 0.016 2 0.85 176 150 0.87 177 3.74 82 0.014 8 0.84 177 200 0.87 177 2.78 78 0.013 18 0.85 177 250 0.88 177 2.16 75 0.012 11 0.85 176 300 0.88 177 1.77 73 0.015 15 0.86 176 350 0.88 177 1.50 70 0.009 7 0.87 176 400 0.88 177 1.26 67 0.012 3 0.87 176 450 0.88 177 1.09 65 0.012 18 0.87 175 500 0.89 177 0.97 64 0.009 10 0.88 175 i dq = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 30 0.90 168 17.89 95 0.013 2 0.86 172 50 0.89 173 10.76 91 0.013 3 0.86 175 100 0.88 176 5.32 86 0.014 19 0.86 177 150 0.88 177 3.53 83 0.013 6 0.86 177 200 0.88 177 2.63 80 0.011 4 0.86 177 250 0.88 178 2.05 77 0.012 14 0.86 177 300 0.88 177 1.69 75 0.013 2 0.87 177 350 0.89 177 1.43 72 0.010 9 0.87 176 400 0.89 177 1.22 70 0.014 3 0.88 176 450 0.89 177 1.06 68 0.011 8 0.88 176 500 0.89 177 0.94 67 0.011 15 0.88 176
9 MRF1511T1 motorola rf device data applications information design considerations this device is a commonsource, rf power, nchannel enhancement mode, lateral m etalo xide s emiconductor f ielde ffect t ransistor (mosfet). motorola application note an211a, afets in theory and practiceo, is suggested reading for those not familiar with the construction and characteristics of fets. this surface mount packaged device was designed primari- ly for vhf and uhf portable power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gatetodrain (c gd ), and gatetosource (c gs ). the pn junction formed during fabrica- tion of the rf mosfet results in a junction capacitance from draintosource (c ds ). these capacitances are characterized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheets. the relationships between the interterminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf applications. drain c ds source gate c gd c gs c iss = c gd + c gs c oss = c gd + c ds c rss = c gd drain characteristics one critical figure of merit for a fet is its static resistance in the fullon condition. this onresistance, r ds(on) , occurs in the linear region of the output characteristic and is specified at a specific gatesource voltage and drain current. the drainsource voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally required for typical applications. measurement of bv dss is not recommended and may result in possible damage to the device. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high on the order of 10 9 w e resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gatetosource threshold voltage, v gs(th) . gate voltage rating e never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination e the gates of these devices are essentially capacitors. circuits that leave the gate opencir- cuited or floating should be avoided. these conditions can result in turnon of the devices due to voltage buildup on the input capacitor due to leakage currents or pickup. gate protection e these devices do not have an internal monolithic zener diode from gatetosource. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gatetosource impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gatedrain capacitance. if the gatetosource impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gatethreshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain current flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. therefore, the gate bias circuit may generally be just a simple resistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line.
MRF1511T1 10 motorola rf device data mounting the specified maximum thermal resistance of 2 c/w assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, athermal management and mounting method for the pld1.5 rf power surface mount package,o and engineering bulletin eb209/d, amounting method for rf power leadless surface mount transistoro for additional information. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, aimpedance matching networks applied to rf power transistors.o largesignal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. twoport stability analysis with this device's sparameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, arf smallsignal design using twoport parameterso for a discussion of two port network theory and stability.
11 MRF1511T1 motorola rf device data notes
MRF1511T1 12 motorola rf device data package dimensions case 46602 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. resin bleed/flash allowable in zone v, w, and x. dim min max min max millimeters inches a 0.255 0.265 6.48 6.73 b 0.225 0.235 5.72 5.97 c 0.065 0.072 1.65 1.83 d 0.130 0.150 3.30 3.81 e 0.021 0.026 0.53 0.66 f 0.026 0.044 0.66 1.12 g 0.050 0.070 1.27 1.78 h 0.045 0.063 1.14 1.60 k 0.273 0.285 6.93 7.24 l 0.245 0.255 6.22 6.48 n 0.230 0.240 5.84 6.10 p 0.000 0.008 0.00 0.20 q 0.055 0.063 1.40 1.60 r 0.200 0.210 5.08 5.33 s 0.006 0.012 0.15 0.31 u 0.006 0.012 0.15 0.31 zone v 0.000 0.021 0.00 0.53 zone w 0.000 0.010 0.00 0.25 zone x 0.000 0.010 0.00 0.25 style 1: pin 1. drain 2. gate 3. source 4. source 2 3 4 1 af r l n k d b q e p c g h zone x zone w 0.89 (0.035) x 45 5 10 draft zone v s u resin bleed/flash allowable j 0.160 0.180 4.06 4.57 j 0.115 2.92 0.020 0.51 0.115 2.92 mm inches 0.095 2.41 0.146 3.71 solder footprint motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product cou ld create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : motorola japan ltd.; sps, technical information center, 3 201, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 minamiaz abu. minatoku, tokyo 1 068573 japan. 81334403569 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, motorola fax back system us & canada only 18007741848 2, dai king street, tai po industrial estate, tai po, n.t., hong kong. http://sps.motorola.com/mfax/ 85226668334 home page : http://www.motorola.com/semiconductors/ ? mrf1511/d

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